| PART |
Description |
Maker |
| KTB1151 |
EPITAXIAL PLANAR PNP TRANSISTOR (LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT)
|
KEC(Korea Electronics)
|
| BC337 BC337-25 BC337-40 Q62702-C314-V3 BC337-16 BC |
Si-Epitaxial PlanarTransistors
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) NPN硅晶体管自动对焦（高电流增益高集电极电流低集电极发射极饱和电压）
|
Siemens Semiconductor G...
Diotec Elektronische
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 2SC945 |
Collector current up to 150mA High hFE linearity Collector to base voltage VCBO 60 V
|
TY Semiconductor Co., L...
|
| C2611 |
Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
|
TY Semiconductor Co., Ltd
|
| CM150DUS-12F |
IGBT Module; Continuous Collector Current, Ic:150A; Collector Emitter Saturation Voltage, Vce(sat):2V; Power Dissipation, Pd:520W; Collector Emitter Voltage, Vceo:600V 150 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
|
| 2SC5212 |
Small Signal Transistor
Low collector saturation voltage VCE(sat)=0.2V typ. High collector current ICM=1A.
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 93C56 93C56AEP 93C56AESN 93C56BESN 93C56BEP |
2K 5.0V Automotive Temperature Microwire Serial EEPROM
2K 5.0V Automotive Temperature Microwire Serial EEPROM
Dissipation, Pd:22.2W; Package/Case:MiniDIP; C-E Breakdown Voltage:600V
IGBT Module; Continuous Collector Current, Ic:5A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:16.7W; C-E Breakdown Voltage:600V; Collector Current:5A; Collector Emitter Voltage, Vceo:600V RoHS Compliant: No
|
Microchip Technology Inc.
|
| 2SC3443 |
High hFE=150 to 800. High collector current (Ic=2A). High collector dissipation Pc=500mW.
|
TY Semiconductor Co., Ltd
|
| 74HC HCMOS 74HCT 74HCU |
: Conductor AWG#18 to #22; Termination Style: Crimping; Current Rating(Amps)(Max.): 5; Contact Mating Area Plating: Palladium; Operating Temperature
Small Signal Bipolar Transistor; Collector Emitter Voltage, Vceo:100V; Transistor Polarity:N Channel; C-E Breakdown Voltage:100V; DC Current Gain Min (hfe):30; Package/Case:R245; Collector Base Voltage:120V
HCMOS family characteristics
|
Philips Semiconductors
NXP Semiconductors
|
| NFM18PC224R0J3 NFM18PC104R1C3 NFM18PC105R0J3 NFM18 |
EMIFILr (Capacitor type) Single Circuit Type for Large Current
EMIFILr (Capacitor type) Single Circuit Type for Large Current NFM18PC Series (0603 Size)
|
Murata Manufacturing Co., L...
Murata Manufacturing Co...
|
| NFM21PC NFM21PC104R1E3 NFM21PC225B0J3 NFM21PC475B1 |
EMIFILr (Capacitor type) Single Circuit Type for Large Current
EMIFILr (Capacitor type) Single Circuit Type for Large Current NFM21PC Series (0805 Size)
|
Murata Manufacturing Co., Ltd.
|
